The The Anisotropy of Electron Scattering in Uniaxially Deformed N-Si Single Crystals with Radiation Defects

  • Sergiy Valentynovych Luniov Lutsk National Technical University
  • Andriy Zimych Lutsk National Technical University
  • Yulia Udovytska Lutsk National Technical University
  • Olexandr Burban Volyn College of National University of Food Technologies
Keywords: radiation defects, A-centers, parameter of mobility anisotropy, tensoresistance, n-Si single crystals


The tensoresistance at the uniaxial pressure along the crystallographic direction [100] for n-Si single crystals, which were irradiated by the different doses of gamma quants was investigated. On the basis of the theory of anisotropic scattering and experimental data of the tensoresistance the dependences of the parameter of mobility anisotropy on the uniaxial pressure for the data of single crystals are obtained. It has been shown that for unirradiated n-Si single crystals, the parameter of mobility anisotropy does not depend on uniaxial pressure since the alloying impurities of phosphorus will be completely ionized at T=77 K. For the gamma - irradiated n-Si single crystals the parameter of mobility anisotropy will decrease with an increase in exposure dose by reducing the screening effect. In this case, it is necessary to take into account the mechanisms of electron scattering on the impurity ions, impurity complexes, which consist of several ions of the impurity and on the fluctuation potential, which leads to the appearance of gradients of resistivity. The changing of relative contribution of these the scattering mechanismsat at the uniaxial pressure determines the obtained dependences of the parameter of mobility anisotropy and the tensoelectric properties of gamma-irradiated n-Si single crystals.


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Hari Singh Nalwa. Silicon-Based Materials and Devices // Academic Press, San Diego, 2001, 609 p.

Priolo, Francesco; Gregorkiewicz, Tom; Galli, Matteo; Krauss, Thomas F. Silicon nanostructures for photonics and photovoltaics // Nature Nanotechnology, Vol. 9, No. 1, 2014, p. 19-32.

Paul Siffert, Eberhard Krimmel. Silicon // Springer-Verlag, Berlin Heidelberg, 2004, p. 550.

Shimura Fumio. Semiconductor Silicon Crystal Technology // Elsevier Science & Technology, 2012, p. 435.

E.N. Vologdin, A.P. Lysenko. Integral radiative changes in the parameters of semiconductor materials (Moscow, 1998).

Ozdemir F.B., Selcuk A.B., Ozkorucuklu S., Alpat A.B., Ozdemir T., Ó¦zek N. Simulation and experimental measurement of radon activity using a multichannel silicon-based radiation detector // Applied radiation and isotopes, 2018, V.135, p. 61-66.

Pratip Mitra; Saurabh Srivastava; Sunil K. Singh; D. K. Akar ; H. K. Patni ; Anita Topkar ; A. Vinod Kumar. Optimum Energy Compensation for Current Mode Application of Silicon PIN Diode in Gamma Radiation Detection // IEEE Transactions on Nuclear Science, 2016, Vol. 63, Issue 6, p. 2777 – 2781.

R.S. Selesnick, D.N. Baker, S.G. Kanekal. Proton straggling in thick silicon detectors // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2017, Vol. 394, p. 145-152.

Belous A.I., Solodukha V.A., Shvedov S.V. Cosmic electronics // M.: - Technosphere, 2015, p. 487.

Zeiler Marcel. Radiation-hard silicon photonics for future high energy physics experiments // PhD thesis, Dublin City University, 2017, 123 p.

Bir G.L., Picus G.E. Symmetry and deformation effects in semiconductors.-Moscow: Nauka, 1972. -584 p.

Polyakova A.L. Deformation of semiconductors and semiconductor devices. -M. Energy, 1979.- p.8-155.

Fedosov A.V., Luniov S.V., Fedosov S.A. Influence of Uniaxial Deformation on the Filling of the Level Associated with A-center in n-Si Crystals // Ukr. J. Phys. 2011, Vol. 56, N 1, p.69-73.

Konozenko I.D., Semenyuk A.K., Khivrich V.I. Radiation effects in silicon. - Kyiv: Naukova dumka, 1974. - 200 p.

Baransky P.I., Fedosov A.V., Gaidar G.P. Physical properties of crystals of silicon and germanium in the fields of effective external influence. - Lutsk. " Nadstirya", 2000 - 280 p.

Baransky P.I., Buda I.S., Dakhovsky I.V., Kolomozets V.V. Electrical and galvanomagnetic phenomena in anisotropic semiconductors. - K.: Naukova dumka, 1977. - 269 p.

Herring C. Transport Properties of a Many-Valley Semiconductors // Bell. Syst. Techn. Journ, 1955, v. 34, â„–2.-p. 237-290.

Luniov S.V., Panasiuk L.I., Fedosov S.A. Deformation Potential Constants Ξu and Ξd in n-Si Determined with the Use of the Tensoresistance Effect // Ukr. J. Phys. 2012, Vol. 57, N 6, p.636-641.

How to Cite
Luniov, S., Zimych, A., Udovytska, Y., & Burban, O. (2018). The The Anisotropy of Electron Scattering in Uniaxially Deformed N-Si Single Crystals with Radiation Defects. JOURNAL OF ADVANCES IN PHYSICS, 14(2), 5406-5414. Retrieved from