ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells

  • Maarif Ali Jafarov Baku State University, Baku, Azerbaijan
  • E.F. Nasirov Baku State University, Baku, Azerbaijan
  • S.A. Jahangirova Baku State University, Baku, Azerbaijan
Keywords: solar cell, ZnS, Cu2ZnSnS4, CdTe, thin film, electrodeposition


A solar cell with glass/ITO/ZnS/Cu2ZnSnS4/CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu2ZnSnS4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form  ITO/ZnS/Cu2ZnSnS4/CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature.  These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure.


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How to Cite
Jafarov, M., Nasirov, E., & Jahangirova, S. (2018). ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells. JOURNAL OF ADVANCES IN PHYSICS, 14(2), 5435-5441. Retrieved from https://cirworld.com/index.php/jap/article/view/7395