Main Article Content
Multilayer thin films of amorphous arsenic triselenide (As2Se3) were obtained by spin coating solution of an amine salt in amide on glass substrate. The deposited multilayers in the range of 500 to 1000 nm were optically characterized by measuring the transmission spectra at room temperature. All used samples were baked and annealed for different periods of times and temperatures. The effect of layers number, baking times and temperatures on optical parameters were investigated. The thickness of the prepared samples up to four layers was ranging between 0.1 µm to 0.2 µm.
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors retain the copyright of their manuscripts, and all Open Access articles are distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided that the original work is properly cited.
The use of general descriptive names, trade names, trademarks, and so forth in this publication, even if not specifically identified, does not imply that these names are not protected by the relevant laws and regulations. The submitting author is responsible for securing any permissions needed for the reuse of copyrighted materials included in the manuscript.
While the advice and information in this journal are believed to be true and accurate on the date of its going to press, neither the authors, the editors, nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein.
2. M. Hammam, G.J. Adriaenssens, J. Dauwen, G. Seynhaeve and W. Grevendonk, J. Non- Cryst. Sol., 119 (1990) 89
3. M. Hammam, G.J. Adriaenssens and W. Grevendonk, J. Phys. C, Sol. St. Phys., 18 (1985) 2151
4. G.C. Chern, I. Lauks and K.H. Norian, Thin Solid Films, 123 (1985) 189
5. E. Bychkov, V. Tsegelink, Yu Viasov, A. Paradel and Ribs, J. Non- Cryst. Sol., 208 (1996) 1
6. B. Singh, G.C. Chern and I. Lauks, J. Vac. Sci. Technol., B, 3 (1985) 327
7. M. Hammam, M. Abdel Harith and W.H. Osman, Sol. St. Commun., 59: 5 (1986) 271
8. L. Vrions and W. Rippens, Appl. Opt., 22 (1983) 4105
9. R. Swanepoel, J. Phys. E, Sci. Instrum., 16 (1983) 1214 and 17 (1984) 896
10. E. Marquez, J.M. Gonzaler-Leal, R. Prieto-Aicon, M. Vick, A. Stronski, T.
Wagner and D. Minkov, Appl. Phys. A67 (1998) 371
11. J.B. Ramirez-Malo, E. Marquez, P. Villares and R. Jimenez-Garay, Phys. Stat.
Sol. (a), 133 (1992) 499
12. M. Ambrico, D. Smaldone, C. Spezzacatena, V. Stango, G. Perna and V. Capzzi, Semicond. Sci. Technol. 13 (1998) 1446
13. T. Toyo Da, J. Phys. D: Appl. Phys., 18 (1985) L129
14. A.M. Farid, Egypt. J. Sol., 25: 1 (2002) 23
15. J. B. Ramirez-Malo, E. Marquez, C. Corrales, P. Villares and R. Jimenez-Garay
Sci. Eng. B, 25 (1994) 53
16. J.T. Tauc, Amorphous and liquid semiconductors, Ed. J. Tauc, Plenum, New York (1974)
17. N.A. Bakr, H. El-Hadidy, M. Hammam and M.D. Migahed, Thin Solid Films, 424 (2003) 296