First principles calculations on the electronic and optical properties of zincblende BxGa1-xAs , and BxIn1-xAs semiconductor alloys.
A theoretical study of the electronic and optical properties of zincblende BxGa1-xAs and BxIn1-xAs semiconductor alloys is presented, using the full potential linearized augmented plane wave method. In this approach, the generalized gradient approximation was used for the exchangeâ€“correlation potential. Ground state properties such as lattice parameter and band structure are calculated as a function of the mole fraction.
We have also analyzed the optical properties (refractive index, dielectric function, real and imaginary), the 4x4 Kaneâ€™s interaction matrix is calculated in order to ease simulations of optoelectronic devices. The results have been discussed in terms of previously existing experimental and theoretical data, and comparisons with similar compounds have been made.
Copyright (c) 2017 JOURNAL OF ADVANCES IN PHYSICS
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors retain the copyright of their manuscripts, and all Open Access articles are distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided that the original work is properly cited.
The use of general descriptive names, trade names, trademarks, and so forth in this publication, even if not specifically identified, does not imply that these names are not protected by the relevant laws and regulations. The submitting author is responsible for securing any permissions needed for the reuse of copyrighted materials included in the manuscript.
While the advice and information in this journal are believed to be true and accurate on the date of its going to press, neither the authors, the editors, nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein.